Northwestern and Western Digital demonstrate a new way to write antiferromagnetic MRAM bits
Researchers from Northwestern University, led by Prof. Pedram Khalili, together with collaborators from Western Digital, demonstrated a new way to write data into all-antiferromagnetic tunnel junctions (ATJs) at room temperature. The researchers call the new mechanism octupole-driven spin-transfer torque (OTT). It was long assumed that antiferromagnets, with their zero net magnetization, cannot generate this kind of spin-transfer torque.
An antiferromagnetic tunnel junction pillar, beside the two spin configurations of PtMn3 that store a bit (image: Northwestern University)
Each junction sandwiches a thin MgO barrier between two layers of the non-collinear antiferromagnet PtMn3 (Mn3Pt). The same simple two-terminal structure is used for both writing and reading: a current pulse switches the antiferromagnetic state, and a resistance measurement reads it out. The researchers explain that the torque originates from an imbalance between intra- and inter-sublattice spin currents, which corresponds to the net cluster octupole polarization of each PtMn3 layer.
Source: https://www.mram-info.com/northwestern-and-western-digital-demonstrate-new-way-write-antiferromagnetic-mram-bits
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